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| Pieza del fabricante | IPB160N04S2L03ATMA1 |
|---|---|
| Fabricante | IR (Infineon Technologies) |
| Descripción | MOSFET N-CH 40V 160A TO263-7 |
| Categoría | productos semiconductores discretos |
| Familia | transistores - fets, mosfets - simples |
| Ciclo vital: | New from this manufacturer. |
| Entrega: | DHL FedEx Ups TNT EMS |
| Pago | T/T Paypal Visa MoneyGram Western Union |
| Ficha de datos | IPB160N04S2L03ATMA1 PDF |
| En stock | 770.544 |
|---|---|
| Precio unitario | $ 0.00000 |
IPB160N04S2L03ATMA1 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]
| Tipo | Descripción |
|---|---|
| serie: | OptiMOS™ |
| paquete: | Tape & Reel (TR) |
| estado de la pieza: | Discontinued at Digi-Key |
| tipo de feto: | N-Channel |
| tecnología: | MOSFET (Metal Oxide) |
| voltaje de drenaje a fuente (vdss): | 40 V |
| corriente - drenaje continuo (id) @ 25°c: | 160A (Tc) |
| tensión de accionamiento (máx. rds activado, min rds activado): | 4.5V, 10V |
| rds en (máx.) @ id, vgs: | 2.7mOhm @ 80A, 10V |
| vgs(th) (máx) @ id: | 2V @ 250µA |
| carga de puerta (qg) (máx.) @ vgs: | 230 nC @ 5 V |
| vgs (máx.): | ±20V |
| capacitancia de entrada (ciss) (máx.) @ vds: | 6000 pF @ 15 V |
| característica fet: | - |
| disipación de potencia (máx.): | 300W (Tc) |
| Temperatura de funcionamiento: | -55°C ~ 175°C (TJ) |
| Tipo de montaje: | Surface Mount |
| paquete de dispositivos del proveedor: | PG-TO263-7-3 |
| paquete / caja: | TO-263-7, D²Pak (6 Leads + Tab) |
We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.
We provide DHL, FedEx, UPS, EMS, SF Express, and Registered Air Mail international shipping.
TT in advance (bank transfer), Western Union,PayPal. Customer is responsible for shipping fee, bank charges, duties and taxes.
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