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| Pieza del fabricante | RP1E100XNTR |
|---|---|
| Fabricante | ROHM Semiconductor |
| Descripción | MOSFET N-CH 30V 10A MPT6 |
| Categoría | productos semiconductores discretos |
| Familia | transistores - fets, mosfets - simples |
| Ciclo vital: | New from this manufacturer. |
| Entrega: | DHL FedEx Ups TNT EMS |
| Pago | T/T Paypal Visa MoneyGram Western Union |
| Ficha de datos | RP1E100XNTR PDF |
| En stock | 659.853 |
|---|---|
| Precio unitario | $ 0.00000 |
RP1E100XNTR Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]
| Tipo | Descripción |
|---|---|
| serie: | - |
| paquete: | Tape & Reel (TR)Cut Tape (CT) |
| estado de la pieza: | Obsolete |
| tipo de feto: | N-Channel |
| tecnología: | MOSFET (Metal Oxide) |
| voltaje de drenaje a fuente (vdss): | 30 V |
| corriente - drenaje continuo (id) @ 25°c: | 10A (Ta) |
| tensión de accionamiento (máx. rds activado, min rds activado): | 4V, 10V |
| rds en (máx.) @ id, vgs: | 13mOhm @ 10A, 10V |
| vgs(th) (máx) @ id: | 2.5V @ 1mA |
| carga de puerta (qg) (máx.) @ vgs: | 11 nC @ 5 V |
| vgs (máx.): | ±20V |
| capacitancia de entrada (ciss) (máx.) @ vds: | 800 pF @ 10 V |
| característica fet: | - |
| disipación de potencia (máx.): | 2W (Ta) |
| Temperatura de funcionamiento: | 150°C (TJ) |
| Tipo de montaje: | Surface Mount |
| paquete de dispositivos del proveedor: | MPT6 |
| paquete / caja: | 6-SMD, Flat Leads |
We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.
We provide DHL, FedEx, UPS, EMS, SF Express, and Registered Air Mail international shipping.
TT in advance (bank transfer), Western Union,PayPal. Customer is responsible for shipping fee, bank charges, duties and taxes.
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